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Sputter Ion Gun
The use of microwaves to sustain the plasma allows ions to be extracted at very low energies without the plasma collapsing (down to 25eV) and since there are no hot metal electrodes in the plasma also permits the use of reactive gases such as oxygen and hydrogen.
The new GenII is the second generation of the IonEtch sputter gun with some significant improvements in performance and features. To name only some: higher total beam current, high efficiency direct microwave coupling without need of tuning, Alumina plasma cup now standard, only 4 screws to undo non-bakeable parts and more compact, space saving air side setup. Besides the standard version a high current version of the IonEtch sputter gun is available with up to 4mA ion current and 120µA/cm² at 100 mm working distance.
application of the IonEtch is the sputter
cleaning of surfaces with Argon bombardment.
Integration of the robust microwave generator and the ion source, mean that no tuning of the source is required and there is no waveguide to construct or install.
to the evanescent
wave coupling, no electrodes are present in the plasma i.e. no
or other metal. Therefore the source is also suitable for use with
reactive gases such as oxygen and hydrogen. The plasma is surrounded by
Alumina (Al2O3) which is
superior to other dielectric materials such as Boronnitride (BN) due to
generation of secondary electrons. A selection of grids and grid
conductances allows the optimum balance between gas flow, working
pressure and beam current to be achieved.
The IonEtch Sputter Gun/Ion Source comes complete with microwave and ion extraction power supplies.
In the interests of continuous product development, specifications are subject to change without notice.
Quick links to other major tectra products:
Electron Beam Evaporator - 4-pocket e-beam evaporator - Plasma Source - Atomic Hydrogen Source - Sputter Gun - Mini-Coater Deposition System - Sputter-Coater
phone: Germany (0) 69 - 72 00 40
fax: Germany (0) 69 - 72 04 00
|last update: 9.8.07|